Fairchild Semiconductor si4532dy free download

File name si4532dy.pdf

Si4532DY September 1999 Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power N-Channel 3.9A, 30V.RDS(ON) = 0.065 @VGS = 10V field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very RDS(ON) = 0.095 @VGS = 4.5V. high density process is especially tailored to minimize P-Channel -3.5A,-30V.RDS(ON)= 0.085 @VGS = -10V on-state resistance and provide superior switching performance. These devices are particularly suited for RDS(ON)= 0.190 @VGS = -4.5V. low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and High density cell design for extremely low RDS(ON). resistance to transients are needed. High power and current handling capability in a widely used surface mount package. Dual (N & P-Channel) MOSFET in surface mount package. ' ' ' ' * 6 * 62 6 $EVROXWH 0D[LP XP 5DWLQJV